Atomic level termination for passivation and functionalisation of silicon surfaces

Superacid Passivation of Crystalline Silicon Surfaces.

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the ...

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

Multidentate macromolecules for functionalisation, passivation and labelling of metal nanoparticles.

A new class of SERRS-active macromolecule designed to protect silver nanoparticle surfaces against salt corrosion whilst retaining colloidal stability of the particles is reported.

Exclusively Gas-Phase Passivation of Native Oxide-Free Silicon(100) and Silicon(111) Surfaces.

Reactions in the gas phase are of primary technological importance for applications in nano- and microfabrication technology and in the semiconductor industry. We present exclusively gas-phase protocols to chemically passivate oxide-free Si(111) and Si(100) surfaces with short-chain alkynes. The resulting surfaces showed equal or better oxidation resistance than most existing liquid-phase-deriv...

Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy

The impact of post-deposition hydrogen plasma treatment (HPT) on passivation in amorphous/crystalline silicon (a-Si:H/c-Si) interfaces is investigated. Combining low temperature a-Si:H deposition and HPT, a high effective charge carrier lifetime > 8ms is achieved on c-Si<100>, which serves as model for surfaces promoting epitaxy of a-Si:H. It is shown that the passivation improvement stems from...